25
-10V
20
-4.5V
-3V
10
Vds=-5V
8
-Id (A)
-2.5V
10
Vgs=-2V
-Id (A)
15
6
125°C
4
5
0
0
1
2
2
25°C
0
3
4
5
0
0.5
1
1.5
2
2.5
3
-Vds (Volts)
Fig 1: On-Region Characteristics
-Vgs (Volts)
Figure 2: Transfer Characteristics
1.6
120
100
Normalized On-Resistance
Rds(on) (m
:
)
1.4
Id=-5A
Vgs=-4.5V
Vgs=-10V
80
60
40
Vgs=-2.5V
1.2
Vgs=-2.5V
Id=-2A
Vgs=-4.5V
1
Vgs=-10V
20
0
2
4
6
8
10
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
190
170
150
Id=-2A
1.0E+01
1.0E+00
1.0E-01
125°C
Rds(on) (m
:
)
130
-Is (A)
125°C
110
90
70
50
30
10
0
2
4
6
8
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
5
Vds=-15V
Id=-5A
4
1400
1200
Capacitance (pF)
1000
800
600
400
C
oss
200
C
rss
C
iss
-Vgs (Volts)
3
2
1
0
0
2
4
6
8
10
12
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
-Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
Tj(max)=150°C
Ta=25°C
10Ps
Rds(on)
limited
0.1s
100Ps
1ms
10ms
40
Tj(max)=150°C
Ta=25°C
30
-Id (Amps)
Power (W)
10.0
20
1.0
1s
10s
DC
10
0.1
0.1
1
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
D=T
on
/T
T
j,pk
=T
a
+P
dm
.Z
Tja
.R
Tja
R
Tja
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
